Abstract
Yarimo‘tkazgich-dielektrik tuzilmalarini amaliy qo‘llash sohasida dielektrik chegara sohasida zaryadlarning to‘planishi kuzatiladi. Bu esa yarimo‘tkazgich-dielektrik asosida yaratilgan elektron qurilmalarning ishchi xarakteristikasiga jiddiy ta’sir o‘tkazadi. SiO2 ning valent zonasida hosil bo‘lgan zaryad Si/SiO2 chegara sohasida ushlanib qoladi. Bunday zaryadlarning to‘planishi ko‘pincha izolyatsion SiO2 ning buzilishiga olib keladi, shuningdek, vaqt o‘tishi bilan ularning barqarorligini cheklash va radiatsiya qarshiligini kamaytirish orqali izolyatorli kremniy asosida hosil bo‘lgan qurilmalar parametrlariga ta’sir qiladi. Ushbu maqolada biz ion bilan o‘zgartirilgan kremniy-izolyatorli tuzulmalarni elektrofizik xususiyatlari tahlil etildi.
References
B Kuchkarov, O Mamatkarimov , A Abdulkhayev “Influence of the ultrasonic irradiation on characteristic of the structures metal-glass-semiconductor” ICECAE 2020 IOP Conf. Series: Earth and Environmental Science 614 (2020) 012027. doi:10.1088/1755-1315/614/1/012027.
Salokhiddin Fazliddinov, Behzod Kuchkarov, Nosir Sharibaev, Abror Abdulkhaev and Mukhammad-Ali Tulkinov “Analysis of modern methods of determination of mechanical status and diagnostic models of power transformers” APITECH-IV - 2022 Journal of Physics: Conference Series 2388 (2022) 012173 doi:10.1088/1742-6596/2388/1/012173.
B. H. Kuchkarov, O. O. Mamatkarimov, A. A. Abdukarimov, A. Khalmirzayev, D. M. Mirtojiyeva “Influence of all-round compression on formation of the mobile charge in lead-borosilicate glass structure” AIP Conf. Proc. 2432, 030039 (2022) https://doi.org/10.1063/5.0089980.
OO Mamatkarimov, BH Kuchkarov, N Yu Sharibaev, AA Abdulkhayev. “Influence Of The Ultrasonic Irradiation On Characteristic Of The Structures Metal-Glass-Semiconductor” European Journal of Molecular & Clinical Medicine. 2021/1/1. №8/01 str 610-618.
Bekzod Xoshimjonovich Qo‘chqarov, Azizbek Nishonov, Xoshimjon Ortiqovich Qo‘chqarov. “THE EFFECT OF TUNNELING CURRENT ON THE SPEED SURFACE GENERATION OF CHARGE CARRIERS” Scientific and Technical Journal of Namangan Institute of Engineering and Technology. 2009 y. № 1/7 str 3-6.
Behzod Khoshimjonovich Kuchkarov, Odijon Ohundedaevich Mamatkarimov. “Influence of ultrasonic action on the rate of charge formation of the inversion layer in metal-glass-semiconductor structures” 2019 y. №29/4 str. 125-134.
Behzod Khoshimjanovich Kuchkarov, Odiljon Oxundedaevich Mamatkarimov, Abrorbek Abdulloxonovich Abdulkhayev. “RELAXATION DEPENDENCE OF THE CAPACITY OF A THREE-LAYER STRUCTURE IN THE PROCESS OF CHARGE FORMATION OF AN INVERSION LAYER” Scientific and Technical Journal of Namangan Institute of Engineering and Technology. 2019 y. №1/6 стр 26-33.
S.I. Vlasov, A.V. Ovsyannikov, B. Kh. Kuchkarov “Influence of thermo cyclic treatments on SiO2-Si interface properties in Al-SiO2-n-Si structures” Uzbekiston Fizika Zhurnali 2012 y 14/1 стр 20-22.
SI Vlasov, FA Saparov, B Kh Kuchkarov “ Effect of the semiconductor-insulator interface on the characteristics of the metal-insulator-semiconductor structures ” Uzbekiston Fizika Zhurnali 2009 y 11/3 стр 203-206.
Б.Х. Кучкаров, М. Кахаров “МДП-структура и ультразвук” Экономика и социум 2019 г. 12/ (67) стр 623-626.
B. X. Qo‘chqarov, A. Nishonov, X.O. Qo‘chqarov “The effect of tunneling current on the speed surface generation of charge carriers” Scientific Bulletin of Namangan State University 2019y 1/7 str 3-6.
B.X. Qo‘chqarov, A.Nishonov, X.O. Qochqarov, Scientific bulletin of Namangan State University, “The effect of tunneling gurrent on the spedd surface generation of charge garries”, (2020)y. 1(7), 3-6.
S. I. Vlasov, D. N. Nazirov, B.K. Kuchkarov, K.U. Bobokhujayev, “Influence of all-round compression on formation of the mobile charg in Iead-borosilicate qlass structure”. “Uzbekiston Fizika Zhurnali”, (2014) y. 3(16), 231-233.
B.T. Abdulazizov, G. Gulyamov, P. J. Baymatov, Sh. T. Inoyatov, M. S. Tokhirjonov and Kh. N. Juraev//Peculiarities of the Temperature Dependence of the Chemical Potential of a Two-dimensional Electron Gas in Magnetic Field// SPIN Vol. 13, No. 1 (2022). pp (2-7), https://doi.org/10.1142/S2010324722500023
B.T. Abdulazizov/Cyclotron mass of an electron in strong magnetic fields in a wide InAs quantum well/ Eurasian Journal of Physics and Functional Materials (2022), 6(1), pp 32-37, doi.org/10.32523/ejpfm.2022060103
G.Gulyamov, B.T.Abdulazizov, P.J.Baymatov.Three-band simulation of the g-factor of an electron in an InAs quantum well in strong magnetic fields .Journal of Nanomaterials, Volume (2021), Article ID pp (559-563), https://doi.org/10.1155/2021/5542559
P.J. Baymatov, B.T. Abdulazizov. Concentration dependences of the electron effective mass, Fermi enerjy, and filling of subbands in doped InAs/AlSb quantum wells.Украинский Физический Журнал. Ukr. J. Phys.2017. Vol. 62, No. 1, стр 46-50 , https://doi.org/10.15407/ujpe62.01.0046.